Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure-Reference-Cited by-同舟云学术

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure

Published:2022-11-29 Issue:12 Volume:9 Page:3967-3973
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Mei Yang¹^ORCID,Xie Minchao¹,Yang Tao¹,Hou Xin¹,Ou Wei¹,Long Hao¹^ORCID,Ying Leiying¹,Liu Yuejun²,Weng Guoen²^ORCID,Chen Shaoqiang²^ORCID,Zhang Baoping¹

Affiliation:

1. Laboratory of Micro/Nano-Optoelectronics, Department of Micro Electronic and Integrated Circuits, Xiamen University, Xiamen361005, China

2. State Key Laboratory of Precision Spectroscopy, Department of Electronic Engineering, East China Normal University, Shanghai200241, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Xiamen University

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.2c01366

Reference39 articles.

1. Recent Progress in Micro‐LED‐Based Display Technologies

2. Mini-LED, Micro-LED and OLED displays: present status and future perspectives

3. Micro-LED as a Promising Candidate for High-Speed Visible Light Communication

4. Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology

5. Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

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