Enhanced Electrical Transport Properties of Molybdenum Disulfide Field-Effect Transistors by Using Alkali Metal Fluorides as Dielectric Capping Layers-Reference-Cited by-同舟云学术

Enhanced Electrical Transport Properties of Molybdenum Disulfide Field-Effect Transistors by Using Alkali Metal Fluorides as Dielectric Capping Layers

Published:2024-04-08 Issue:16 Volume:18 Page:10776-10787
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Wani Sumayah-Shakil¹²³,Hsu Chen Chieh⁴,Kuo Yao-Zen¹²³,Darshana Kumara Kimbulapitiya Kimbulapitiya Mudiyanselage Madhusanka¹²³,Chung Chia-Chen¹²³,Cyu Ruei-Hong¹²³,Chen Chieh-Ting¹²³,Liu Ming-Jin¹²³,Chaudhary Mayur¹²³,Chiu Po-Wen²⁵^ORCID,Zhong Yuan-Liang⁴^ORCID,Chueh Yu-Lun¹²³⁶^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan

2. College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan

3. Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan

4. Department of Physics and Quantum Information Center, Chung Yuan Christian University, Taoyuan, 32034, Taiwan

5. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan

6. Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea

Funder

National Science and Technology Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c11025

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