Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing-Reference-Cited by-同舟云学术

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Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing

Published:2023-03-13 Issue:6 Volume:17 Page:6095-6102
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Liao Junyi¹²³,Wen Wen¹,Wu Juanxia¹^ORCID,Zhou Yaming²,Hussain Sabir¹,Hu Haowen⁴,Li Jiawei⁴,Liaqat Adeel¹,Zhu Hongwei⁴^ORCID,Jiao Liying²^ORCID,Zheng Qiang¹³^ORCID,Xie Liming¹³^ORCID

Affiliation:

1. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China

2. Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China

3. University of Chinese Academy of Sciences, Beijing 100049, P.R. China

4. School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China

Funder

Ministry of Science and Technology of the People's Republic of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c01198

Reference63 articles.

1. First draft of a report on the EDVAC

2. The future of electronics based on memristive systems

3. The uniform memory hierarchy model of computation

4. Balancing Performance and Reliability in the Memory Hierarchy

5. Reducing DRAM latencies with an integrated memory hierarchy design

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