Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS<sub>2</sub> Thin Film Transistors-Reference-Cited by-同舟云学术

Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS₂ Thin Film Transistors

Published:2024-01-26 Issue:5 Volume:18 Page:4414-4423
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Shin Heechang¹,Katiyar Ajit Kumar¹,Hoang Anh Tuan¹^ORCID,Yun Seok Min¹,Kim Beom Jin¹,Lee Gwanjin²,Kim Youngjae²³,Lee JaeDong²,Kim Hyunmin⁴^ORCID,Ahn Jong-Hyun¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

2. Department of Physics and Chemistry, DGIST, Daegu 42988, Republic of Korea

3. School of Physics, KIAS, Seoul 02455, Republic of Korea

4. Department of Interdisciplinary Engineering, DGIST, Daegu 42988, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c10495

Reference49 articles.

1. Van der Waals heterostructures

2. Transistors based on two-dimensional materials for future integrated circuits

3. Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

4. Promises and prospects of two-dimensional transistors

5. Doping on demand in 2D devices

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