Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor-Reference-Cited by-同舟云学术

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Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor

Published:2024-05-15 Issue:21 Volume:18 Page:13849-13857
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zou Taoyu¹,Heo Seongmin¹,Byeon Gwon¹,Yoo Soohwan¹^ORCID,Kim Mingyu¹,Reo Youjin¹,Kim Soonhyo¹,Liu Ao²^ORCID,Noh Yong-Young¹^ORCID

Affiliation:

1. Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea

2. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c02711

Reference53 articles.

1. Photonic van der Waals integration from 2D materials to 3D nanomembranes

2. Solution-Processed 2D Transition Metal Dichalcogenides: Materials to CMOS Electronics

3. Van der Waals‐Interface‐Dominated All‐2D Electronics

4. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

5. Continuous Color‐Tunable Light‐Emitting Devices Based on Compositionally Graded Monolayer Transition Metal Dichalcogenide Alloys

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