Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)-Reference-Cited by-同舟云学术

Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)

Published:2018-10-29 Issue:11 Volume:12 Page:11161-11168
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chen Ming-Wei,Kim HoKwon,Bernard Carlo¹,Pizzochero Michele,Zaldı́var Javier²,Pascual Jose Ignacio²³^ORCID,Ugeda Miguel M.³⁴⁵,Yazyev Oleg V.,Greber Thomas¹^ORCID,Osterwalder Jürg¹,Renault Olivier⁶⁷,Kis Andras^ORCID

Affiliation:

1. Physik-Institut, University of Zurich, 8057 Zurich, Switzerland

2. CIC nanoGUNE, 20018 Donostia-San Sebastian, Spain

3. Ikerbasque, Basque Foundation for Science, 48013 Bilbao, Spain

4. Donostia International Physics Center (DIPC), Manuel Lardizábal 4, 20018 San Sebastián, Spain

5. Centro de Fı́sica de Materiales (CSIC-UPV/EHU), Manuel Lardizábal 5, 20018 San Sebastián, Spain

6. Université Grenoble Alpes, F-38000 Grenoble, France

7. CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

Funder

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

H2020 Future and Emerging Technologies

FP7 Ideas: European Research Council

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.8b05628

Reference42 articles.

1. Single-layer MoS2 transistors

2. Emerging Photoluminescence in Monolayer MoS2

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

5. 2D transition metal dichalcogenides

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