Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS<sub>2</sub> Heterojunctions-Reference-Cited by-同舟云学术

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS₂ Heterojunctions

Published:2022-06-27 Issue:7 Volume:16 Page:11036-11048
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Wang Wei¹,Wang Weijun¹,Meng You¹,Quan Quan¹,Lai Zhengxun¹,Li Dengji¹,Xie Pengshan¹,Yip SenPo²,Kang Xiaolin¹,Bu Xiuming¹^ORCID,Chen Dong¹,Liu Chuntai³^ORCID,Ho Johnny C.¹²⁴⁵

Affiliation:

1. Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China

2. Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan

3. Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou 450002, China

4. State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China

5. Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China

Funder

Research Grants Council, University Grants Committee

Science and Technology Commission of Shanghai Municipality

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c03673

Reference75 articles.

1. Van der Waals heterostructures

2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

3. Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

4. Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes

5. Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes

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