Excellent Bidirectional Adjustable Multistage Resistive Switching Memory in Bi2FeCrO6 Thin Film-Reference-Cited by-同舟云学术

Excellent Bidirectional Adjustable Multistage Resistive Switching Memory in Bi2FeCrO6 Thin Film

Published:2020-11-17 Issue:48 Volume:12 Page:54168-54173
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhou Hang-Lv¹^ORCID,Jiang Yan-Ping¹,Tang Xin-Gui¹^ORCID,Liu Qiu-Xiang¹^ORCID,Li Wen-Hua¹,Tang Zhen-Hua¹

Affiliation:

1. School of Physics & Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, P. R. China

Funder

Government of Guangdong Province

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c16040

Reference35 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

4. Memristive switching mechanism for metal/oxide/metal nanodevices

5. Nanoionics-based resistive switching memories

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