Substrate-Induced Variances in Morphological and Structural Properties of MoS2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO2-Reference-Cited by-同舟云学术

Substrate-Induced Variances in Morphological and Structural Properties of MoS2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO2

Published:2020-09-15 Issue:40 Volume:12 Page:45101-45110
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sitek Jakub¹^ORCID,Plocharski Janusz²,Pasternak Iwona¹^ORCID,Gertych Arkadiusz P.¹^ORCID,McAleese Clifford³,Conran Ben R.³,Zdrojek Mariusz¹,Strupinski Wlodek¹

Affiliation:

1. Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

2. Faculty of Chemistry, Warsaw University of Technology, Noakowskiego 3, 00-664 Warsaw, Poland

3. AIXTRON Ltd., Buckingway Business Park, Anderson Road, Swavesey CB24 4FQ, United Kingdom

Funder

European Commission

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsami.0c06173

Reference72 articles.

1. Band-gap transition induced by interlayer van der Waals interaction in MoS2

2. Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

3. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

4. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

5. Light-emitting diodes by band-structure engineering in van der Waals heterostructures

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