In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III–V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants-Reference-Cited by-同舟云学术

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In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III–V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants

Published:2024-04-01 Issue:8 Volume:24 Page:3218-3227
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

McMahon William E.¹^ORCID,Braun Anna K.²,Perna Allison N.²,Coll Pablo G.³,Schulte Kevin L.¹^ORCID,Boyer Jacob T.¹,Neumann Anica N.¹²,Geisz John F.¹,Warren Emily L.¹^ORCID,Ptak Aaron J.¹,Merkle Arno P.³,Bertoni Mariana I.³⁴^ORCID,Packard Corinne E.¹²^ORCID,Steiner Myles A.¹

Affiliation:

1. National Renewable Energy Laboratory, Golden, Colorado 80401, United States

2. Colorado School of Mines, Golden, Colorado 80401, United States

3. Crystal Sonic Inc., Phoenix, Arizona 85003, United States

4. Arizona State University, Tempe, Arizona 85287, United States

Funder

National Science Foundation Graduate Research Fellowship Program

U.S. Department of Education

U.S. Department of Energy

Solar Energy Technologies Program

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c01407

Reference41 articles.

1. Horowitz, K.; Ptak, A.; Smith, B.; Remo, T. A Techno-Economic Analysis and Cost Reduction Roadmap for III-V Solar Cells NREL/TP-6A20–72103, 2018.

2. Techno-economic analysis of three different substrate removal and reuse strategies for III-V solar cells

3. Relationships between fracture parameters and fracture surface roughness of brittle polymers

4. Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies

5. Controlled spalling of (100)-oriented GaAs with a nanoimprint lithography interlayer for thin-film layer transfer without facet formation

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