Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces-Reference-Cited by-同舟云学术

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Published:2024-03-06 Issue:6 Volume:24 Page:2542-2551
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Mao Shiyi¹,Gao Tinghong¹^ORCID,Li Lianxin¹,Gao Yue¹,Zhang Zhan¹,Chen Qian¹,Xie Quan¹^ORCID

Affiliation:

1. Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China

Funder

Guizhou University

Guizhou Provincial Science and Technology Department

National Natural Science Foundation of China

Guizhou Engineering Research Center for smart services

High-level Creative Talent Training Program in Guizhou Province of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00001

Reference47 articles.

1. Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

2. Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study

3. Fundamentals of atomic and close-to-atomic scale manufacturing: a review

4. New development of atomic layer deposition: processes, methods and applications

5. Femtosecond laser inscription of Bragg gratings on a thin GaN film grown on a sapphire substrate

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