Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer-Reference-Cited by-同舟云学术

Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer

Published:2024-07-09 Issue:15 Volume:24 Page:6115-6123
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Shetty Satish¹²^ORCID,Kuchuk Andrian V.¹^ORCID,Maia de Oliveira Fernando¹^ORCID,Kryvyi Serhii¹,Li Chen¹,Minor Paul³,Zamani-Alavijeh Mohammad¹⁴,M. Eldose Nirosh¹^ORCID,Das Subhashis¹,Baral Dinesh¹,Mazur Yuriy I.¹^ORCID,Mantooth H. Alan⁵,Salamo Gregory J.¹²⁴

Affiliation:

1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

2. Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

3. Department of Electrical Engineering, Arkansas State University, Jonesboro, Arkansas 72467, United States

4. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, United States

5. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

Funder

Army Research Laboratory

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00095

Reference39 articles.

1. Direct epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition

2. Indium nitride (InN): A review on growth, characterization, and properties

3. InN and GaN/InN monolayers grown on ZnO( 000 1 ¯) and ZnO(0001)

4. Selective growth of ordered hexagonal InN nanorods

5. Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network