Field Effect Studies on Rubrene and Impurities of Rubrene-Reference-Cited by-同舟云学术

Field Effect Studies on Rubrene and Impurities of Rubrene

Published:2005-12-21 Issue:2 Volume:18 Page:244-248
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Zeis Roswitha¹,Besnard Celine¹,Siegrist Theo¹,Schlockermann Carl¹,Chi Xiaoliu¹,Kloc Christian¹

Affiliation:

1. Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, and Department of Materials Chemistry, Lund University, S-221 00 Lund, Sweden

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm0502626

Reference17 articles.

1. Intrinsic Charge Transport on the Surface of Organic Semiconductors

2. Organic single-crystal field-effect transistors

3. Hole mobility in organic single crystals measured by a “flip-crystal” field-effect technique

4. Bias-Dependent Generation and Quenching of Defects in Pentacene

5. Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

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