Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics-Reference-Cited by-同舟云学术

Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics

Published:2017-06-22 Issue:26 Volume:9 Page:21856-21863
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hota Mrinal K.¹,Alshammari Fwzah H.¹,Salama Khaled N.¹,Alshareef Husam N.¹^ORCID

Affiliation:

1. Physical Sciences and Engineering Division and ‡Computer, Electrical and Mathematical Sciences & Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Funder

King Abdullah University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b03078

Reference39 articles.

1. Introduction to flash memory

2. Flash memory cells-an overview

3. Flexible Organic Transistor Memory Devices

4. Graphene Flash Memory

5. Additive-Driven Assembly of Block Copolymer–Nanoparticle Hybrid Materials for Solution Processable Floating Gate Memory

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