Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment-Reference-Cited by-同舟云学术

Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment

Published:2017-05-10 Issue:20 Volume:9 Page:17576-17585
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Kwangeun¹^ORCID,Ryu Jae Ha¹^ORCID,Kim Jisoo¹,Cho Sang June¹,Liu Dong¹,Park Jeongpil¹,Lee In-Kyu¹,Moody Baxter²,Zhou Weidong³,Albrecht John⁴,Ma Zhenqiang¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Wisconsin—Madison, 1415 Engineering Drive, Madison, Wisconsin 53706, United States

2. HexaTech, Inc., 991 Aviation Parkway, Morrisville, North Carolina 27560, United States

3. Department of Electrical Engineering, University of Texas at Arlington, 701 S. Nedderman Drive, Arlington, Texas 76019, United States

4. Department of Electrical and Computer Engineering, Michigan State University, 428 S. Shaw Lane, East Lansing, Michigan 48824, United States

Funder

Defense Advanced Research Projects Agency

Wisconsin Alumni Research Foundation

Office of Naval Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link