Ultra-High-Speed Intense Pulsed-Light Irradiation Technique for High-Performance Zinc Oxynitride Thin-Film Transistors-Reference-Cited by-同舟云学术

Ultra-High-Speed Intense Pulsed-Light Irradiation Technique for High-Performance Zinc Oxynitride Thin-Film Transistors

Published:2019-01-04 Issue:4 Volume:11 Page:4152-4158
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jeong Hyun-Jun¹,Lee Hyun-Mo¹,Ryu Chung-Hyeon²,Park Eun-Jae¹,Han Ki-Lim¹,Hwang Hyun-Jun²^ORCID,Ok Kyung-Chul¹,Kim Hak-Sung²³^ORCID,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

2. Department of Mechanical Convergence Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

3. Institute of Nano Science and Technology, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Korea Evaluation Institute of Industrial Technology

Ministry of Science, ICT and Future Planning

Korea Display Research Corporation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b20291

Reference39 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium–Gallium–Zinc Oxide

3. Effects of Repetitive Mechanical Stress on Flexible Oxide Thin-Film Transistors and Stress Reduction via Additional Organic Layer

4. Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

5. Enhanced Electrical Characteristics and Stability via Simultaneous Ultraviolet and Thermal Treatment of Passivated Amorphous In–Ga–Zn–O Thin-Film Transistors

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