F4-TCNQ on Epitaxial Bi-Layer Graphene: Concentration- and Orientation-Dependent Charge Transfer at the Interface-Reference-Cited by-同舟云学术

F4-TCNQ on Epitaxial Bi-Layer Graphene: Concentration- and Orientation-Dependent Charge Transfer at the Interface

Published:2022-12-13 Issue:51 Volume:38 Page:16067-16072
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Chattopadhyay Sudeshna¹^ORCID,Munya Vikas¹,Kumar Ravinder¹,Pal Dipayan¹,Bandyopadhyay Sucheta²,Ghosh Arpan¹,Yogi Priyanka³,Koch Julian³,Pfnür Herbert³^ORCID

Affiliation:

1. Department of Physics, Indian Institute of Technology Indore, Indore453552, India

2. Indian Statistical Institute (Laboratory for Cognitive Systems and Cybernetics Research, Center for Soft Computing Research)Kolkata700108, India

3. Department ATMOS, Institute for Solid State Physics, Leibniz Universität Hannover, D-30167Hannover, Germany

Funder

University Grants Commission

Deutscher Akademischer Austauschdienst

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.2c02676

Reference31 articles.

1. Molecular orientation in small-molecule organic light-emitting diodes

2. The influence of molecular orientation on organic bulk heterojunction solar cells

3. Highly oriented crystals at the buried interface in polythiophene thin-film transistors

4. Understanding the Interplay between Molecule Orientation and Graphene Using Polarized Raman Spectroscopy

5. Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping

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