Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study-Reference-Cited by-同舟云学术

Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study

Published:2024-08-27 Issue:36 Volume:40 Page:19146-19154
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Xu Hang¹^ORCID,Hu Jiping¹,Wang Fang¹²³⁴,Qu Yipu¹,Liu Yuhuai¹²³⁴

Affiliation:

1. National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, College of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China

2. Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China

3. Research Institute of Industrial Technology Co. Ltd., Zhengzhou University, Zhengzhou, Henan 450001, P. R. China

4. Zhengzhou Way Do Electronics Co. Ltd., Zhengzhou, Henan 450001, P. R. China

Funder

Science and Technology Innovation 2025 Major Project of Ningbo Municipality

National Key Research and Development Program of China

National Natural Science Foundation of China

Key Program for International Joint Research of Henan Province

Zhengzhou 1125 Innovation Project

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.4c02310

Reference62 articles.

1. Boron nitride (BN) and BN composites for high-temperature applications

2. Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications

3. Dielectric Constant of Boron Nitride Films Synthesized by Plasma-Assisted Chemical Vapor Deposition

4. Recent Development of Boron Nitride towards Electronic Applications

5. High temperature thermal management with boron nitride nanosheets