Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing-Reference-Cited by-同舟云学术

Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing

Published:2021-12-03 Issue:49 Volume:37 Page:14284-14291
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Khan Muhammad Bilal¹²³^ORCID,Prucnal Slawomir¹,Ghosh Sayantan¹,Deb Dipjyoti¹²,Hübner René¹^ORCID,Pohl Darius³⁴,Rebohle Lars¹,Mikolajick Thomas³⁵,Erbe Artur¹³^ORCID,Georgiev Yordan M.¹⁶

Affiliation:

1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany

2. International Helmholtz Research School for Nanoelectronic Network, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany

3. Technische Universität Dresden, Center for Advancing Electronics Dresden (CfAED), Dresden 01069, Germany

4. Dresden Center for Nanoanalysis (DCN), CfAED, Technische Universität Dresden, Dresden 01069, Germany

5. Namlab gGmbH, Nöthnitzer Strasse 64, Dresden 01187, Germany

6. Institute of Electronics at the Bulgarian Academy of Sciences, 72, Tsarigradsko Chaussee Boulevard, Sofia 1784, Bulgaria

Funder

Deutsche Forschungsgemeinschaft

Horizon 2020 Framework Programme

International Helmholtz Research School NanoNet

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.1c01862

Reference62 articles.

1. Reconfigurable Silicon Nanowire Transistors

2. Lateral Extensions to Nanowires for Controlling Nickel Silicidation Kinetics: Improving Contact Uniformity of Nanoelectronic Devices

3. d’Heurle, F. M.; Lavoie, C.; Gas, P.; Philibert, J. Diffusion Processes in Advanced Technological Materials; Elsevier: New York, 2005; pp 283–332.

4. Reactive Phase Formation in Thin Film Metal/Metal and Metal/Silicon Diffusion Couples

5. Formation and Evolution of Nickel Silicide in Silicon Nanowires

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