Structural and Electrical Characterization of SiO2 Gate Dielectrics Deposited from Solutions at Moderate Temperatures in Air-Reference-Cited by-同舟云学术

Structural and Electrical Characterization of SiO2 Gate Dielectrics Deposited from Solutions at Moderate Temperatures in Air

Author:

Esro Mazran¹²,Kolosov Oleg³,Jones Peter J.¹,Milne William I.⁴⁵,Adamopoulos George¹^ORCID

Affiliation:

1. Engineering Department, Lancaster University, Lancaster LA1 4YR, United Kingdom

2. Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM) Durian Tunggal, Melaka 76100, Malaysia

3. Department of Physics, Lancaster University, Lancaster LA1 4YW, United Kingdom

4. Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom

5. Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550, Japan

Funder

Fakulti Kejuruteraan Elektronik Dan Kejuruteraan Komputer, Universiti Teknikal Malaysia Melaka

Ministry of Education, Malaysia

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference43 articles.

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献