Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlOx) Dielectrics on In0.53Ga0.47As
Author:
Affiliation:
1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am400368x
Reference34 articles.
1. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
2. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
3. Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
4. GaAs interfacial self-cleaning by atomic layer deposition
5. Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors
Cited by 65 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Performance Gate-Controlled Superconducting Switches: Large Output Voltage and Reproducibility;ACS Nano;2024-07-26
2. The Evaluation of Interface Quality in HfO2 Films Probed by Time-Dependent Second-Harmonic Generation;Materials;2024-07-13
3. Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al2O3/HfO2/SiO2 and HfO2/Al2O3/SiO2 Trilayers for Ultraviolet Laser Applications;ACS Applied Materials & Interfaces;2024-06-05
4. Neuromorphic Vision Sensor driven by Ferroelectric HfAlO;Materials Today Nano;2024-06
5. Neural network modeling and prediction of HfO 2 thin film properties tuned by thermal annealing;High Power Laser Science and Engineering;2024
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3