Physically Responsive Field-Effect Transistors with Giant Electromechanical Coupling Induced by Nanocomposite Gate Dielectrics-Reference-Cited by-同舟云学术

Physically Responsive Field-Effect Transistors with Giant Electromechanical Coupling Induced by Nanocomposite Gate Dielectrics

Published:2011-08-17 Issue:9 Volume:5 Page:7069-7076
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Tien Nguyen Thanh¹,Trung Tran Quang¹,Seoul Young Gug¹,Kim Do Il¹,Lee Nae-Eung¹

Affiliation:

1. School of Advanced Materials Science & Engineering and ‡SKKU Advanced Institute of Nanotechnology (SAINT), and Samsung Advanced Institute for Health Sciences and Technology (SAIHST), Sungkyunkwan University (SKKU), Suwon, Kyunggi-do 440-746, Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn2017827

Reference31 articles.

1. Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes

2. Pressure sensing by flexible, organic, field effect transistors

3. Piezoelectric Field Effect Transistor and Nanoforce Sensor Based on a Single ZnO Nanowire

4. Flexible ferroelectret field-effect transistor for large-area sensor skins and microphones

5. A Rubberlike Stretchable Active Matrix Using Elastic Conductors

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