Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires-Reference-Cited by-同舟云学术

Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires

Published:2006-06-28 Issue:7 Volume:6 Page:1541-1547
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Stoica Toma¹,Meijers Ralph J.¹,Calarco Raffaella¹,Richter Thomas¹,Sutter Eli¹,Lüth Hans¹

Affiliation:

1. Institute of Thin Films and Interfaces (ISG1) and Center of Nanoelectronic Systems for Information Technology (cni), Research Centre Jülich, 52425 Jülich, Germany, and Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl060547x

Reference35 articles.

1. SEMICONDUCTOR NANOWIRES AND NANOTUBES

2. Origin of electron accumulation at wurtzite InN surfaces

3. Indium nitride (InN): A review on growth, characterization, and properties

4. Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates

5. Synthesis and characterization of single-crystal indium nitride nanowires

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