First-Principles Investigation of Janus MgZnXY (X, Y = O, S, Se, Te; X ≠ Y) Monolayers for Short-Channel Field Effect Transistor-Reference-Cited by-同舟云学术

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First-Principles Investigation of Janus MgZnXY (X, Y = O, S, Se, Te; X ≠ Y) Monolayers for Short-Channel Field Effect Transistor

Published:2024-09-12 Issue: Volume: Page:
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Ghobadi Nayereh¹^ORCID,Gholami Rudi Somayeh²^ORCID,Soleimani-Amiri Samaneh³^ORCID

Affiliation:

1. Department of Electrical Engineering, University of Zanjan, Zanjan 4537138791, Iran

2. Department of Electrical Engineering, Qaemshahr Branch, Islamic Azad University, Qaemshahr 4765161964, Iran

3. Faculty of Electrical and Computer Engineering, Babol Noshirvani University of Technology, Babol 4714871167, Iran

Funder

Babol Noshirvani University of Technology

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.4c03718

Reference64 articles.

1. The era of hyper-scaling in electronics

2. Metrology for the next generation of semiconductor devices

3. Layered Semiconducting 2D Materials for Future Transistor Applications

4. Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

5. p-Type High-Performance WSi₂N₄ MOSFETs with the Ultrashort Scale of Sub-5 nm

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