Multinuclear Tin-Based Macrocyclic Organometallic Resist for EUV Photolithography-Reference-Cited by-同舟云学术

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Multinuclear Tin-Based Macrocyclic Organometallic Resist for EUV Photolithography

Published:2024-03-27 Issue:5 Volume:4 Page:468-478
ISSN:2694-2461
Container-title:ACS Materials Au
language:en
Short-container-title:ACS Mater. Au

Author:

Lim Gayoung¹,Lee Kangsik¹,Koh Chawon²³,Nishi Tsunehiro²,Yoon Hyo Jae¹^ORCID

Affiliation:

1. Department of Chemistry, Korea University, Seoul 02841, Republic of Korea

2. Semiconductor R&D Center, Samsung Electronics Co., Ltd, Gyeonggi-do 18448, Republic of Korea

3. Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea

Funder

Samsung

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsmaterialsau.4c00010

Reference100 articles.

1. EUV Lithography Technology for High-volume Production of Semiconductor Devices

2. Advanced optical lithography development, from UV to EUV

3. Promising Lithography Techniques for Next-Generation Logic Devices

4. High-numerical aperture extreme ultraviolet scanner for 8-nm lithography and beyond

5. The Moore's Law Machine: The Next Trick to Tinier Transistors is High-Numerical-Aperture EUV Lithography

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Balancing sensitivity and resolution by feedback regulation of free radicals from Sn-C bonds in tin-oxygen clusters EBL photoresist;Science China Materials;2024-08-22

2. Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da);ACS Nano;2024-08-20

3. Electron-Beam-Induced Modification of N-Heterocyclic Carbenes: Carbon Nanomembrane Formation;The Journal of Physical Chemistry Letters;2024-08-02

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