Highly Monochromatic Ultraviolet LED Based on the SnO<sub>2</sub> Microwire Heterojunction Beyond Dipole-Forbidden Band-Gap Transition-Reference-Cited by-同舟云学术

Highly Monochromatic Ultraviolet LED Based on the SnO₂ Microwire Heterojunction Beyond Dipole-Forbidden Band-Gap Transition

Published:2023-11-14 Issue:47 Volume:15 Page:54655-54666
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Maosheng¹,Yang Zhenyu¹,Sha Shulin¹,Tang Kai¹,Wan Peng¹,Kan Caixia¹^ORCID,Shi Da Ning¹,Jiang Mingming¹^ORCID

Affiliation:

1. College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China

Funder

Nanjing University of Aeronautics and Astronautics

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c12764

Reference65 articles.

1. High Steric‐Hindrance Windmill‐Type Molecules for Efficient Ultraviolet to Pure‐Blue Organic Light‐Emitting Diodes via Hybridized Local and Charge‐Transfer Excited‐State

2. First Chinese ultraviolet–visible hyperspectral satellite instrument implicating global air quality during the COVID-19 pandemic in early 2020

3. Fully inorganic oxide-in-oxide ultraviolet nanocrystal light emitting devices

4. Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

5. Ultraviolet electroluminescence from nanostructural SnO2-based heterojunction with high-pressure synthesized Li-doped ZnO as a hole source

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