<i>C</i>-Axis Aligned Composite InZnO via Thermal Atomic Layer Deposition for 3D Nanostructured Semiconductor-Reference-Cited by-同舟云学术

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C-Axis Aligned Composite InZnO via Thermal Atomic Layer Deposition for 3D Nanostructured Semiconductor

Published:2024-03-15 Issue:12 Volume:16 Page:14995-15003
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Hye-Mi¹,Ryu Seong-Hwan¹,Kim Sangwook²,Lee Kwang-Hee²,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

2. Samsung Advanced Institute of Technology, Samsung Electronics, Samsung-ro 130, Youngtong-gu, Suwon 16678, Republic of Korea

Funder

Samsung Advanced Institute of Technology

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c16879

Reference44 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Material characteristics and applications of transparent amorphous oxide semiconductors

3. Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

4. Review of recent advances in flexible oxide semiconductor thin-film transistors

5. 12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors

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1. Enhanced Electrical Properties and Stability in IGZO TFTs via Low-Temperature Activation with MgO_x Layer;ACS Applied Materials & Interfaces;2024-07-26

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