High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition-Reference-Cited by-同舟云学术

High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition

Published:2023-04-06 Issue:15 Volume:15 Page:19137-19151
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cho Min Hoe¹,Choi Cheol Hee²,Kim Min Jae²,Hur Jae Seok²^ORCID,Kim Taikyu²^ORCID,Jeong Jae Kyeong²^ORCID

Affiliation:

1. Department of Process Development, Samsung Display, Yongin 17113, South Korea

2. Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea

Funder

Samsung

LG Display

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c00038

Reference67 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Present status of amorphous In–Ga–Zn–O thin-film transistors

3. Recent progress of oxide-TFT-based inverter technology

4. Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

5. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative analysis on negative-bias-illumination-stress instabilities between planar- and vertical-channel thin-film transistors using InGaZnO active channels prepared by atomic-layer deposition;Materials Science in Semiconductor Processing;2024-10

2. The comprehensive study of hybrid dielectric layer adopted organic thin film transistors for low voltage operation;Journal of Molecular Liquids;2024-09

3. In₂O₃/ZnO heterojunction thin film transistor for high recognition accuracy neuromorphic computing and optoelectronic artificial synapses;Nanotechnology;2024-06-20

4. Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer;Scientific Reports;2024-05-13

5. Power-efficient and high-performance potential of pentacene transistors enabled by metal-nitride gate insulators fabricated with nitrogen plasma;Organic Electronics;2024-05