Understanding the Electronic Transport of Al–Si and Al–Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy-Reference-Cited by-同舟云学术

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Understanding the Electronic Transport of Al–Si and Al–Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy

Published:2024-04-02 Issue:15 Volume:16 Page:19350-19358
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Behrle Raphael¹^ORCID,Murphey Corban G. E.²,Cahoon James F.²,Barth Sven³⁴^ORCID,den Hertog Martien I.⁵^ORCID,Weber Walter M.¹^ORCID,Sistani Masiar¹^ORCID

Affiliation:

1. Institute of Solid State Electronics, Technische Universität Wien, Vienna 1040, Austria

2. Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States

3. Physics Institute, Goethe Universität Frankfurt, Frankfurt am Main 60438, Germany

4. Institute of Inorganic and Analytical Chemistry, Goethe Universität Frankfurt, Frankfurt am Main 60438, Germany

5. Institut Néel, CNRS UPR2940, Grenoble 38042, France

Funder

Austrian Science Fund

Deutsche Forschungsgemeinschaft

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c18674

Reference41 articles.

1. Sharma, B. Metal-Semiconductor Schottky Barrier Junctions and Their Applications; Springer Science & Business Media, 2013; p 386.

2. The Schottky barrier transistor in emerging electronic devices

3. Hard Superconducting Gap and Diffusion-Induced Superconductors in Ge–Si Nanowires

4. Al–Ge–Al Nanowire Heterostructure: From Single‐Hole Quantum Dot to Josephson Effect

5. Near-field electrical detection of optical plasmons and single-plasmon sources

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