Gate-Activated Photoresponse in a Graphene p–n Junction-Reference-Cited by-同舟云学术

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Gate-Activated Photoresponse in a Graphene p–n Junction

Published:2011-09-12 Issue:10 Volume:11 Page:4134-4137
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lemme Max C.¹,Koppens Frank H. L.¹²,Falk Abram L.¹,Rudner Mark S.¹,Park Hongkun¹³,Levitov Leonid S.⁴,Marcus Charles M.¹

Affiliation:

1. Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States

2. ICFO-Institut de Ciencies Fotoniques, Mediterranean Technology Park, 08860 Castelldefels (Barcelona), Spain

3. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States

4. Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl2019068

Reference19 articles.

1. Graphene photonics and optoelectronics

2. Fine Structure Constant Defines Visual Transparency of Graphene

3. Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible

4. Photocurrent Imaging and Efficient Photon Detection in a Graphene Transistor

5. Contact and edge effects in graphene devices

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