High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors-Reference-Cited by-同舟云学术

High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors

Published:2009-02-03 Issue:7 Volume:131 Page:2462-2463
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Molinari Anna S.¹,Alves Helena¹,Chen Zhihua¹,Facchetti Antonio¹,Morpurgo Alberto F.¹

Affiliation:

1. Kavli Institue of Nanoscience, Delft University, Lorentzweg 1, 2628CJ, Delft, The Netherlands, INESC-MN, Rua Alves Redol 9, 1000-029 Lisboa, Portugal, Polyera Corporation, 8025 Lamon Avenue, Skokie, Illinois 60077, and DPMC and GAP, University of Geneva, 24 Quai Ernest-Anserment CH-1211, Geneva, Switzerland

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja809848y

Reference37 articles.

1. Raman Spectroscopy Shows Interchain through Space Charge Delocalization in a Mixed Valence Oligothiophene Cation and in Its π-Dimeric Biradicaloid Dication

2. Grain Orientation Mapping of Polycrystalline Organic Semiconductor Films by Transverse Shear Microscopy

3. Novel small molecules for organic field-effect transistors: towards processability and high performance

4. Connecting Electrical and Molecular Properties of Semiconducting Polymers for Thin-Film Transistors

5. Ambipolar Transport in Organic Conjugated Materials

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