Bipolar Semiconducting Properties in α-SnWO4 Based on the Characteristic Defect Structure-Reference-Cited by-同舟云学术

Bipolar Semiconducting Properties in α-SnWO4 Based on the Characteristic Defect Structure

Published:2021-05-26 Issue:11 Volume:60 Page:8035-8041
ISSN:0020-1669
Container-title:Inorganic Chemistry
language:en
Short-container-title:Inorg. Chem.

Author:

Minohara Makoto¹^ORCID,Dobashi Yuka²,Kikuchi Naoto¹^ORCID,Samizo Akane²^ORCID,Tsukuda Kouhei²,Nishio Keishi²,Mibu Ko³^ORCID,Kumigashira Hiroshi⁴⁵,Hase Izumi¹,Yoshida Yoshiyuki¹,Aiura Yoshihiro¹^ORCID

Affiliation:

1. Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

2. Department of Materials Science and Technology, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan

3. Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan

4. Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan

5. Photon Factory, Institute of Materials Structure Science (IMSS), High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Inorganic Chemistry,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.1c00530

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1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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3. High Mobility in a Stable Transparent Perovskite Oxide