Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core–Shell Nanowires
Author:
Affiliation:
1. NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56127 Pisa, Italy
2. IMEM-CNR,Parco Area delle Scienze 37/A, I-43010 Parma, Italy
Funder
Ministero dell’Istruzione, dell’Università e della Ricerca
Russian Foundation for Basic Research
Consiglio Nazionale delle Ricerche
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b04260
Reference29 articles.
1. In1−xGaxAs‐GaSb1−yAsyheterojunctions by molecular beam epitaxy
2. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review
3. InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors
4. Tunnel Field-Effect Transistors: State-of-the-Art
5. Combining Axial and Radial Nanowire Heterostructures: Radial Esaki Diodes and Tunnel Field-Effect Transistors
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