Manipulating Surface States of III–V Nanowires with Uniaxial Stress-Reference-Cited by-同舟云学术

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Manipulating Surface States of III–V Nanowires with Uniaxial Stress

Published:2017-04-10 Issue:5 Volume:17 Page:2816-2824
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Signorello G.¹^ORCID,Sant S.²,Bologna N.³,Schraff M.¹,Drechsler U.¹,Schmid H.¹^ORCID,Wirths S.¹,Rossell M. D.³,Schenk A.²,Riel H.¹

Affiliation:

1. IBM Research - Zurich, 8803 Rüschlikon, Switzerland

2. Integrated Systems Laboratory, Department of Electrical Engineering and Information Technology, ETH Zürich, 8092 Zürich, Switzerland

3. Electron Microscopy Center, EMPA, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

H2020 Marie Sklodowska-Curie Actions

Directorate-General for Research and Innovation

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b05098

Reference71 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. It’s Time to Reinvent the Transistor!

3. Tunnel field-effect transistors as energy-efficient electronic switches

4. Diameter-Dependent Electron Mobility of InAs Nanowires

5. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

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