Gate Modulation of Dissipationless Nonlinear Quantum Geometric Current in 2D Te-Reference-Cited by-同舟云学术

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Gate Modulation of Dissipationless Nonlinear Quantum Geometric Current in 2D Te

Published:2024-08-28 Issue:35 Volume:24 Page:10820-10826
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kim Giheon¹,Bahng Jaeuk²,Jeong Jaemo³,Sakong Wonkil¹,Lee Taegeon⁴,Lee Daekwon⁴,Kim Youngkuk³^ORCID,Rho Heesuk⁴^ORCID,Lim Seong Chu¹²^ORCID

Affiliation:

1. Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea

2. Department of Smart Fabrication Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea

3. Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea

4. Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju 54896, Republic of Korea

Funder

Commercializations Promotion Agency for R and D Outcomes

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c02224

Reference41 articles.

1. Quantum Nonlinear Hall Effect Induced by Berry Curvature Dipole in Time-Reversal Invariant Materials

2. Nonlinear Hall Effect with Time‐Reversal Symmetry: Theory and Material Realizations

3. Berry phase effects on electronic properties

4. Reciprocal Relations in Irreversible Processes. I.

5. Observation of the nonlinear Hall effect under time-reversal-symmetric conditions

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