High-Mobility Carriers in Epitaxial IrO<sub>2</sub> Films Grown using Hybrid Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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High-Mobility Carriers in Epitaxial IrO₂ Films Grown using Hybrid Molecular Beam Epitaxy

Published:2024-08-22 Issue:35 Volume:24 Page:10850-10857
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Nair Sreejith¹^ORCID,Yang Zhifei¹²,Storr Kevin³,Jalan Bharat¹^ORCID

Affiliation:

1. Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, Minnesota 55455, United States

2. School of Physics and Astronomy, University of Minnesota, Twin Cities , Minneapolis, Minnesota 55455, United States

3. Department of Physics, Prairie View A&M University, Prairie View, Texas 77446-0519, United States

Funder

Basic Energy Sciences

Air Force Office of Scientific Research

National Science Foundation

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c02367

Reference53 articles.

1. Metal-insulator transition in vanadium dioxide

2. Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy

3. Insulator–metal transition in substrate-independent VO2 thin film for phase-change devices

4. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition MaterialVO2

5. Harnessing the Metal–Insulator Transition of VO ₂ in Neuromorphic Computing

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