Ultrasensitive Phototransistor Based on WSe2–MoS2 van der Waals Heterojunction-Reference-Cited by-同舟云学术

Ultrasensitive Phototransistor Based on WSe2–MoS2 van der Waals Heterojunction

Published:2020-06-26 Issue:8 Volume:20 Page:5741-5748
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Shin Gwang Hyuk¹,Park Cheolmin¹,Lee Khang June¹,Jin Hyeok Jun¹,Choi Sung-Yool¹^ORCID

Affiliation:

1. School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c01460

Reference47 articles.

1. Dual-gate organic phototransistor with high-gain and linear photoresponse

2. A nanocomposite ultraviolet photodetector based on interfacial trap-controlled charge injection

3. Charge-integrating organic heterojunction phototransistors for wide-dynamic-range image sensors

4. Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single-Walled Carbon Nanotube/C60Phototransistor

5. Ultrahigh and Broad Spectral Photodetectivity of an Organic-Inorganic Hybrid Phototransistor for Flexible Electronics

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