Ultra-Efficient Superconducting Dayem Bridge Field-Effect Transistor
Author:
Affiliation:
1. NEST, Instituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa, Italy
2. SPIN-CNR, Via Dodecaneso 33, I-16146 Genova, Italy
Funder
FP7 People: Marie-Curie Actions
Ministero dell?Istruzione, dell?Universit? e della Ricerca
H2020 Marie Sklodowska-Curie Actions
FP7 Ideas: European Research Council
Regione Toscana
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b01010
Reference36 articles.
1. Lilienfeld, J. E. Method and apparatus for controlling electric currents. U.S. Patent U.S.1,745,175A, Oct 8, 1926.
2. Junction Field-Effect Devices
3. Wanlass, F. Low stad-by power complementary field effect circuitry. U.S. Patent U.S.3,356,858, Dec 5, 1967.
4. Superconductor digital electronics: Scalability and energy efficiency issues (Review Article)
5. 0.1- mu m gate-length superconducting FET
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