Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping-Reference-Cited by-同舟云学术

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Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

Published:2017-08-28 Issue:9 Volume:17 Page:5719-5725
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ubrig Nicolas¹²^ORCID,Jo Sanghyun¹²,Philippi Marc¹²,Costanzo Davide¹²,Berger Helmuth³,Kuzmenko Alexey B.¹,Morpurgo Alberto F.¹²

Affiliation:

1. DQMP, Université de Genève, 24 quai Ernest Ansermet, CH-1211, Geneva, Switzerland

2. GAP, Université de Genève, 24 quai Ernest Ansermet, CH-1211, Geneva, Switzerland

3. Institut de Physique de la Matière Condensée, Ecole Polytechnique Fédérale de Lausanne, CH-1015, Lausanne, Switzerland

Funder

European Commission

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b02666

Reference40 articles.

1. Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport

2. Anomalous Hall effect

3. Berry phase effects on electronic properties

4. Valley-dependent optoelectronics from inversion symmetry breaking

5. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

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