Probing the Formation of Dark Interlayer Excitons via Ultrafast Photocurrent-Reference-Cited by-同舟云学术

Probing the Formation of Dark Interlayer Excitons via Ultrafast Photocurrent

Published:2023-10-03 Issue:20 Volume:23 Page:9212-9218
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yagodkin Denis¹^ORCID,Kumar Abhijeet¹,Ankerhold Elias¹^ORCID,Richter Johanna¹,Watanabe Kenji²^ORCID,Taniguchi Takashi³^ORCID,Gahl Cornelius¹^ORCID,Bolotin Kirill I.¹

Affiliation:

1. Department of Physics, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany

2. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

3. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

Bundesministerium fÃ¼r Bildung und Forschung

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c01708

Reference47 articles.

1. Colloquium : Excitons in atomically thin transition metal dichalcogenides

2. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

3. Negatively Charged and Dark Excitons in CsPbBr3 Perovskite Nanocrystals Revealed by High Magnetic Fields

4. Probing dark exciton diffusion using photovoltage

5. Dark excitons in transition metal dichalcogenides

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain fingerprinting of exciton valley character in 2D semiconductors;Nature Communications;2024-08-30