Impact of Photoluminescence Imaging Methodology on Transport Parameters in Semiconductors-Reference-Cited by-同舟云学术

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Impact of Photoluminescence Imaging Methodology on Transport Parameters in Semiconductors

Published:2024-03-12 Issue:11 Volume:15 Page:3109-3117
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Banappanavar Gangadhar¹,Saxena Rishabh²,Bässler Heinz³,Köhler Anna²³,Kabra Dinesh¹^ORCID

Affiliation:

1. Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India

2. Soft Matter Optoelectronics and Bavarian Polymer Institute (BPS), University of Bayreuth, Universitätsstrasse 30, 95440 Bayreuth, Germany

3. Bayreuth Institute of Macromolecular Research (BIMF), University of Bayreuth, Universitätsstrasse 30, 95440 Bayreuth, Germany

Funder

Deutsche Forschungsgemeinschaft

HORIZON EUROPE Marie Sklodowska-Curie Actions

Department of Science and Technology, Ministry of Science and Technology, India

Ministry of Education, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.4c00169

Reference44 articles.

1. Organic Semiconductor Lasers

2. Light-emitting diodes based on conjugated polymers

3. Approaching disorder-free transport in high-mobility conjugated polymers

4. High fabrication yield organic tandem photovoltaics combining vacuum- and solution-processed subcells with 15% efficiency

5. Singlet-Triplet Annihilation Limits Exciton Yield in Poly(3-Hexylthiophene)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transport, trapping, triplet fusion: thermally retarded exciton migration in tetracene single crystals;Nanoscale;2024

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