Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory-Reference-Cited by-同舟云学术

Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory

Published:2023-01-06 Issue:2 Volume:14 Page:347-353
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Kang Kaijin¹^ORCID,Niu Wen¹^ORCID,Zhang Yanming¹,Li Anlin¹,Zou Xingze¹,Hu Wei¹^ORCID

Affiliation:

1. Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

Funder

Chongqing Research Program of Basic Research and Frontier Technology

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.2c03676

Reference36 articles.

1. Memristive devices for computing

2. Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

3. Recent progress in physically transient resistive switching memory

4. Dynamic Instability and Time Domain Response of a Model Halide Perovskite Memristor for Artificial Neurons

5. Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

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