Light-Mediated Multilevel Flexible High-Efficiency Perovskite Resistive Switching Memory Based on Mn:CsPbCl<sub>3</sub> Nanocrystals-Reference-Cited by-同舟云学术

Light-Mediated Multilevel Flexible High-Efficiency Perovskite Resistive Switching Memory Based on Mn:CsPbCl₃ Nanocrystals

Published:2024-02-01 Issue:6 Volume:15 Page:1572-1578
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Ran Qian¹,Wang Yuchan²³^ORCID,Zhang Wenxia¹^ORCID,Xu Nannan¹,Chen Weiwei¹,Tang Xiaosheng¹

Affiliation:

1. Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China

2. School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

3. Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

Funder

Natural Science Foundation of Chongqing Municipality

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.3c03455

Reference31 articles.

1. Recent advances in resistive random access memory based on lead halide perovskite

2. Review of Semiconductor Flash Memory Devices for Material and Process Issues

3. Elemental electrical switch enabling phase segregation–free operation

4. The role of arsenic in the operation of sulfur-based electrical threshold switches

5. Optoelectronic RAM: Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite (Adv. Electron. Mater. 7/2021)

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