Quasi-Free-Standing Epitaxial Graphene on SiC (0001) by Fluorine Intercalation from a Molecular Source-Reference-Cited by-同舟云学术

Quasi-Free-Standing Epitaxial Graphene on SiC (0001) by Fluorine Intercalation from a Molecular Source

Published:2011-08-31 Issue:9 Volume:5 Page:7662-7668
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Wong Swee Liang¹²,Huang Han²,Wang Yuzhan²,Cao Liang²³,Qi Dongchen²,Santoso Iman⁴,Chen Wei¹²⁴,Wee Andrew Thye Shen¹²

Affiliation:

1. NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive S117456, Singapore

2. Department of Physics, National University of Singapore, 2 Science Drive 3 S117542, Singapore

3. National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, People’s Republic of China

4. Department of Chemistry, National University of Singapore, 3 Science Drive 3 S117543, Singapore

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn202910t

Reference48 articles.

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4. Electric Field Effect in Atomically Thin Carbon Films

5. Graphene: Status and Prospects

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