Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Silicon Nitride with inhibition on Amorphous Carbon-Reference-Cited by-同舟云学术

Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Silicon Nitride with inhibition on Amorphous Carbon

Published:2018-04-27 Issue:10 Volume:30 Page:3223-3232
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Stevens Eric¹²³^ORCID,Tomczak Yoann¹,Chan B. T.¹,Altamirano Sanchez Efrain¹,Parsons Gregory N.²^ORCID,Delabie Annelies¹³^ORCID

Affiliation:

1. Imec, Kapeldreef 75, B-3001 Leuven, Belgium

2. Department of Chemical and Biomolecular Engineering, North Carolina State University, 911 Partners Way, Raleigh, North Carolina 27695, United States

3. KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001, Leuven, Belgium

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.8b00017

Reference39 articles.

1. Horiguchi, N.; Milenin, A. P.; Tao, Z.; Hubert, H.; Altamirano-Sanchez, E.; Veloso, A.; Witters, L.; Waldron, N.; Ragnarsson, L.Å; Kim, M. S.; Kikuchi, Y.; Mertens, H. Patterning Challenges in Advanced Device Architectures: FinFETs to Nanowires. In Proceedings of SPIE: Advanced Etch Technology for Nanopatterning V, San Jose, CA, 2016; SPIE, 2016; p 978209.

2. Area-Selective Atomic Layer Deposition of In2O3:H Using a μ-Plasma Printer for Local Area Activation

3. Spin-on Metal Oxides and Their Applications for Next Generation Lithography

4. 22nm half-pitch patterning by CVD spacer self alignment double patterning (SADP)

5. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

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