Prediction of Large-Gap Two-Dimensional Topological Insulators Consisting of Bilayers of Group III Elements with Bi-Reference-Cited by-同舟云学术

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Prediction of Large-Gap Two-Dimensional Topological Insulators Consisting of Bilayers of Group III Elements with Bi

Published:2014-04-18 Issue:5 Volume:14 Page:2505-2508
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chuang Feng-Chuan¹,Yao Liang-Zi¹,Huang Zhi-Quan¹,Liu Yu-Tzu¹,Hsu Chia-Hsiu¹,Das Tanmoy²,Lin Hsin²,Bansil Arun³

Affiliation:

1. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

2. Graphene Research Centre and Department of Physics, National University of Singapore, Singapore 117542

3. Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl500206u

Reference28 articles.

1. Z2Topological Order and the Quantum Spin Hall Effect

2. Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

3. Quantum Spin Hall Insulator State in HgTe Quantum Wells

4. Nonlocal Transport in the Quantum Spin Hall State

5. Quantum Spin Hall Effect in Inverted Type-II Semiconductors

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