Deciphering the Reaction Cycle Mechanisms and Key Reaction Factors of Monochlorosilane by Disproportionation of Dichlorosilane via Experiments and Density Functional Theory-Reference-Cited by-同舟云学术

Deciphering the Reaction Cycle Mechanisms and Key Reaction Factors of Monochlorosilane by Disproportionation of Dichlorosilane via Experiments and Density Functional Theory

Published:2025-05-08 Issue:19 Volume:10 Page:19480-19490
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Sun Ke¹²,Mao Qiuyun³⁴,Zheng Jianyun⁵⁶^ORCID,Liu Jianhua⁷⁸⁹,Yuan Zhenjun⁹¹⁰,Gu Guangan¹¹,Li Guopeng¹²,Wan Ye⁹¹⁰,Zhong Qifan¹²^ORCID

Affiliation:

1. School of Metallurgy and Environment

2. Central South University

3. Department of Educational Science

4. Hunan First Normal University

5. State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering

6. Hunan University

7. State Key Lab of Silicon and Advanced Semiconductor Materials, School of Materials Science and & Engineering

8. Zhejiang University

9. Luoyang China Silicon Corporation Ltd.

10. National Engineering Research Center of Silicon-based Materials Manufacturing Technology

11. Shanghai Jingmeng Silicon Materials Corporation Ltd.

12. Nanjing Guosheng Electronics Corporation Ltd.

Funder

China Association for Science and Technology

Department of Science and Technology of Hunan Province

Central South University

Yunnan Provincial Science and Technology Department

Education Department of Hunan Province

Science and Technology Program of Guizhou Province

National Natural Science Foundation of China

National Engineering Research Centre of Low-carbon Nonferrous Metallurgy

XIAOMI Foundation

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.4c11528

Reference40 articles.

1. Palladium-Catalyzed Cross-Coupling of Monochlorosilanes and Grignard Reagents

2. An Electrochemical Strategy to Synthesize Disilanes and Oligosilanes from Chlorosilanes**

3. Monochlorosilane for Low Temperature Silicon Epitaxy

4. High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

5. Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook