Intrinsic Current−Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping-Reference-Cited by-同舟云学术

Intrinsic Current−Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping

Published:2007-04-27 Issue:6 Volume:7 Page:1469-1473
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yan Qimin¹,Huang Bing¹,Yu Jie¹,Zheng Fawei¹,Zang Ji¹,Wu Jian¹,Gu Bing-Lin¹,Liu Feng¹,Duan Wenhui¹

Affiliation:

1. Department of Physics, Tsinghua University, Beijing 100084, China, and Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl070133j

Reference21 articles.

1. Organic-functionalized molecular sieves as shape-selective catalysts

2. Logic Circuits with Carbon Nanotube Transistors

3. High Performance Electrolyte Gated Carbon Nanotube Transistors

4. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

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