Enhanced Electrical Properties of an Al-Doped TiO<sub>2</sub> Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer-Reference-Cited by-同舟云学术

Enhanced Electrical Properties of an Al-Doped TiO₂ Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer

Published:2022-04-12 Issue:4 Volume:4 Page:2005-2014
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kwon Dae Seon¹,Kim Tae Kyun¹,Lim Junil¹,Seo Haengha¹,Paik Heewon¹,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea

Funder

Korea Semiconductor Research Consortium

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00166

Reference39 articles.

1. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

2. Future of dynamic random-access memory as main memory

3. Low temperature atomic layer deposition of Ru thin films using a new carbonyl-based Ru precursor and non-oxidizing reactants; Applications to the seed layer for Cu metallization

4. Process–property relationship in high-k ALD SrTiO3 and BaTiO3: a review

5. Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

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