High Doping Activation (≥10<sup>20</sup> cm<sup>–3</sup>) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing-Reference-Cited by-同舟云学术

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High Doping Activation (≥10²⁰ cm^–3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing

Published:2024-06-03 Issue:6 Volume:6 Page:4297-4303
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Saputro Rahmat Hadi¹²^ORCID,Maeda Tatsuro³,Toko Kaoru²^ORCID,Matsumura Ryo¹^ORCID,Fukata Naoki¹²^ORCID

Affiliation:

1. Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Graduate School of Science and Technology, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

3. National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8560, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Murata Science Foundation

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00399

Reference38 articles.

1. Lasing in direct-bandgap GeSn alloy grown on Si

2. Optical modulation in Ge-rich SiGe waveguides in the mid-infrared wavelength range up to 11 µm

3. Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared

4. GeSn lateral p-i-n photodetector on insulating substrate

5. Achieving direct band gap in germanium through integration of Sn alloying and external strain

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